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Mini DIP (SPM3) Application Note (2012-07-09)
5.
Absolute Maximum Ratings
5.1 Electrical Maximum Ratings
Turn-off Switching
The IGBTs incorporated into the Mini DIP SPM have a 600V volt V CES rating. The 500V V PN(Surge) rating
is obtained by subtracting the surge voltage (100V or less, generated by the Mini DIP SPM's internal stray
inductances ) from V CES . Moreover, the 450V V PN rating is obtained by subtracting the surge voltage (50V or
less, generated by the stray inductance between the Mini DIP SPM and the DC-link capacitor) from V PN(Surge) .
Short-circuit Operation
In case of short-circuit turn-off, the 400V V PN(PROT) rating is obtained by subtracting the surge voltage
(100V or less, generated by the stray inductance between the Mini DIP SPM and the DC-link capacitor) from
V PN(Surge) .
Table 5.1 Detail description of absolute maximum ratings (FSBB15CH60C case)
Item
Symbol
Rating
Description
The maximum steady-state (non-switching mode) voltage between
Supply Voltage
V PN
450V
P-N. A brake circuit is necessary if P-N voltage exceeds this value.
The maximum surge voltage (non-switching mode) between
Supply Voltage (surge)
V PN(surge)
500V
P-N. A snubber circuit is necessary if P-N surge voltage exceeds
this value.
Collector-emitter
voltage
V CES
600V
The sustained collector-emitter voltage of built-in IGBTs.
Each IGBT Collector
current
? I C
15A
The maximum allowable DC continuous IGBT collector current at
Tc=25 ? C.
The maximum junction temperature rating of the power chips
integrated within the Mini DIP SPM is 150 ? C. However, to insure
-40 ~
safe operation of the Mini DIP SPM, the average junction
Junction Temperature
T J
150 ? C
temperature should be limited to 125 ? C Although IGBT and FRD
chip will not be damaged right now at T J = 150 ? C, its power cycles
come to be decreased.
Under the conditions that Vcc=13.5 ~ 16.5V, non-repetitive, less
Self Protection
Supply Voltage Limit
than 2 ? s.
V PN(PROT)
400V
The maximum supply voltage for safe IGBT turn off under SC
(Short Circuit
“Short Circuit” or OC “Over Current” condition. The power chip may
Protection Capability)
be damaged if supply voltage exceeds this specification.
? 2008
FAIRCHILD SEMICONDUCTOR - Smart Power Module
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相关代理商/技术参数
FSBB15CH60C 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor
FSBB15CH60F 功能描述:IGBT 晶体管 600V SPM RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
FSBB20CH60 功能描述:IGBT 模块 HIGH_POWER RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB20CH60B 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB20CH60BT 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB20CH60C 功能描述:IGBT 模块 600V 20A SPM RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB20CH60CL 功能描述:IGBT 模块 20A, Motion-SPM RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB20CH60CT 功能描述:IGBT 模块 600V 20A SPM RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: